Organoaminodisilane precursors and methods for depositing films comprising same

ABSTRACT

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I: 
     
       
         
         
             
             
         
       
     
     wherein R 1  and R 3  are independently selected from linear or branched C 3  to C 10  alkyl group, a linear or branched C 3  to C 10  alkenyl group, a linear or branched C 3  to C 10  alkynyl group, a C 1  to C 6  dialkylamino group, an electron withdrawing and a C 6  to C 10  aryl group; R 2  and R 4  are independently selected from hydrogen, a linear or branched C 3  to C 10  alkyl group, a linear or branched C 3  to C 10  alkenyl group, a linear or branched C 3  to C 10  alkynyl group, a C 1  to C 6  dialkylamino group, an electron withdrawing, and a C 6  to C 10  aryl group; and wherein any one, all, or none of R 1  and R 2 , R 3  and R 4 , R 1  and R 3 , or R 2  and R 4  are linked to form a ring.

CROSS-REFERENCE OF RELATED APPLICATIONS

This application claims priority to and benefit of U.S. Provisional Ser.No. 61/654,508, filed Jun. 1, 2012, which is incorporated herein byreference in its entirety.

BACKGROUND OF THE INVENTION

Precursors, particularly organoaminodisilane and compositions thereof,that can be used for the deposition of silicon-containing films,including but not limited to, amorphous silicon, crystalline silicon,silicon nitride, silicon oxide, silicon carbo-nitride, and siliconoxynitride films are described herein. Also described herein is the useof these organoaminodisilane precursors for depositingsilicon-containing silicon-containing films in the fabrication ofintegrated circuit devices. The organoaminodisilane precursors describedherein may be used for a variety of deposition processes, including butnot limited to, atomic layer deposition (“ALD”), chemical vapordeposition (“CVD”), plasma enhanced chemical vapor deposition (“PECVD”),low pressure chemical vapor deposition (“LPCVD”), and atmosphericpressure chemical vapor deposition.

Several classes of compounds can be used as precursors forsilicon-containing films such as, but not limited to, silicon oxide orsilicon nitride films. Examples of these compounds suitable for use asprecursors include silanes, chlorosilanes, polysilazanes, aminosilanes,and azidosilanes. Inert carrier gas(es) or diluents(s) such as, but notlimited, helium, hydrogen, nitrogen, etc., can also used with theprecursor(s) to deliver the precursors to the reaction chamber.

Low pressure chemical vapor deposition (LPCVD) processes are one of themore widely accepted methods used by semiconductor industry for thedeposition of silicon-containing films. Low pressure chemical vapordeposition (LPCVD) using ammonia may require deposition temperatures ofgreater than 750° C. to obtain reasonable growth rates and uniformities.Higher deposition temperatures are typically employed to provideimproved film properties. One of the more common industry methods togrow silicon nitride or other silicon-containing films is through lowpressure chemical vapor deposition in a hot wall reactor attemperatures >750° C. using the precursors silane, dichlorosilane,and/or ammonia. However, there are several drawbacks using this method.For example, certain precursors, such as silane, are pyrophoric. Thismay present problems in handling and usage. Also, films deposited fromsilane and dichlorosilane may contain certain impurities. For example,films deposited using dichlorosilane may contain certain impurities,such as chlorine and ammonium chloride, which are formed as byproductsduring the deposition process. Films deposited using silane may containhydrogen.

Precursors that are used in depositing silicon nitride films such asBTBAS and chlorosilanes generally deposit the films at temperaturesgreater than 550° C. The trend of miniaturization of semiconductordevices and low thermal budget requires lower process temperature andhigher deposition rate. The temperature, at which the silicon films aredeposited, should decrease in order to prevent ion diffusion in thelattice, particularly for those substrates comprising metallizationlayers and on many Group III-V and II-VI devices. Accordingly, there isa need in the art to provide precursors for the deposition ofsilicon-containing films, such as silicon oxide, silicon oxynitride, orsilicon nitride films that are sufficiently chemically reactive to allowdeposition via CVD, ALD or other processes at temperatures of 550° C. orbelow or even at room temperature.

The reference entitled “Disilanyl-amines—Compounds Comprising theStructure Unit Si—Si—N, as Single-Source Precursors for Plasma-EnhancedChemical Vapor Deposition (PE-CVD) of Silicon Nitride”, Schuh et al.,Zeitschrift Für Anorganische and Allgemeine Chemie, 619 (1993), pp.1347-52 describes potential single-source precursors for PECVD ofsilicon nitride films wherein the precursors have the structural unitSi—Si—N such as (Et₂N)₂HSi—SiH₃, (Et₂N)₂HSi—SiH(NEt₂)₂,[(i-Pr)₂N]H₂Si—SiH₃, and [(i-Pr)₂N]H₂Si—SiH₂[N(i-Pr)₂]. The precursor1,2-bis(di-1-propylamino)disilane (BIPADS) was used for the PECVDdeposition of silicon nitride films. The resulting films from the BIPADSprecursor exhibited refractive indices ranging from 1.631-1.814 and hadlow carbon and very low oxygen contents but high, Si-bound hydrogencontents.

The reference entitled “1,2-Disilanediyl Bis(triflate),F₃CSO₃—SiH₂—SiH₂—O₃SCF₃, as the Key Intermediate for a FacilePreparation of Open-Chain and Cyclic 1,1- and 1,2-Diaminodisilanes”,Sölder et al., Inorganic Chemistry, 36 (1997), pp. 1758-63 describeshigh yield syntheses for several open-chain and cyclic diaminodisilaneswith fully hydrogenated Si linkages.

U.S. Pat. No. 5,660,895 describes the deposition of high-quality SiO₂films at low temperatures in a PECVD process using disilane (Si₂H₆) andnitrous oxide.

U.S. Pat. Nos. 7,019,159 and 7,064,083 describe a composition and methodof preparing silane compounds or hexakis(monohydrocarbylamino)disilanesthat are free of chlorine and have the formula: ((R)HN)₃—Si—Si—(NH(R))₃wherein R independently represents a C₁ to C₄ hydrocarbyl. Thehexakis(monohydrocarbylamino)disilane precursors are used for thedeposition of silicon nitride or silicon oxynitride films.

U.S. Pat. No. 8,153,832 describes pentakis(dimethylamino)disilanecompounds having the formula: Si₂(NMe₂)₅Y where Y is selected from thegroup consisting of H, Cl, or an amino group and its use formanufacturing gate silicon-containing films or etch-stopsilicon-containing films of SiN or SiON.

US Publ. No. 2009/0209081 describes methods for depositing silicondioxide containing thin films on a substrate usinghexakis(monoalkylamino)disilane such as hexakis(ethylamino)disilane assilicon source and ozone as oxidant. The growth rate was about 1.1Å/cycle.

U.S. Pat. No. 7,077,904 describes methods for depositing silicon dioxidecontaining thin films on a substrate using hexachlorodisilane as siliconsource and water as oxidant in presence of catalyt such as pyridine. Thegrowth rates were in the range from 2.6 to 0.6 Å/cycle at substratetemperatures from 50 to 140° C.

US Publ. No. 2013/0109155 describes a method of forming a seed layer fora thin film using an aminosilane based gas having two Si atoms such ashexakisethylaminodisilane (C₁₂H₃₆N₆Si₂). Other aminosilanes having thefollowing formulas may also be used: (1) (R1R2)N)nSi2H6-n-m(R3)m . . .n: the number of amino groups, m: the number of alkyl groups or (2)(R1)NH)nSi2H6-n-m(R3)m . . . n: the number of amino groups, m: thenumber of alkyl groups. In formulas (1) and (2), R1, R2, R3=CH₃, C₂H₅,C₃H₇, R1=R2=R3 or may not be the same as each other, n=an integerranging from 1 to 6 and m=0, and 1 to 5.

U.S. Pat. Nos. 7,446,217; 7,531,679; 7,713,346; 7,786,320; 7,887,883;and 7,910,765 describe silane precursors that comprise at least onedisilane derivative that is fully substituted with alkylamino and/ordialkylamino functional groups. Besides the foregoing, there have been afew monodialkylaminodisilanes reported in the art such asdimethylaminodisilane (CAS#14396-26-0P), diethylaminodisilane(CAS#132905-0-5), and di-iso-propylaminodisilane (CAS#151625-25-1).

BRIEF SUMMARY OF THE INVENTION

Described herein are organoaminodisilane precursors comprising a Si—Nbond, a Si—Si bond and a Si—H₂ group having Formula I described herein,compositions comprising organoaminodisilanes having Formula I, andmethods using same for forming films comprising silicon, such as, butnot limited to, amorphous silicon, crystalline silicon, silicon oxide,carbon-doped silicon oxide, silicon nitride, silicon oxynitride, siliconcarbide, silicon carbonitride, and combinations thereof onto at least aportion of a substrate. In addition, described herein is a compositioncomprising an organoaminodisilane described herein wherein theorganoaminodisilane is substantially free of at least one selected froman amine, a halide, a higher molecular weight specie, and a metal. Inthese or other embodiments, the composition may further comprise asolvent. Also disclosed herein are the methods to form films comprisingsilicon or silicon-containing coatings on an object to be processedusing the organoaminodisilane precursors having Formula I describedherein, such as, for example, a semiconductor wafer. In one embodimentof the method described herein, a film comprising silicon and oxygen isdeposited onto a substrate using an organoaminodisilane precursor havingFormula I described herein and an oxygen-containing source in adeposition chamber under conditions for generating a silicon oxide filmon the substrate. In another embodiment of the method described herein,a film comprising silicon and nitrogen is deposited onto a substrateusing an organoaminodisilane precursor having Formula I and a nitrogencontaining precursor in a deposition chamber under conditions forgenerating a silicon nitride film on the substrate. In a furtherembodiment, the organoaminodisilane precursors having Formula Idescribed herein can also be used a dopant for metal containing films,such as but not limited to, metal oxide films or metal nitride films. Inthe compositions and methods described herein, an organoaminodisilanehaving Formula I described herein is employed as at least one of thesilicon containing precursors.

In one aspect, the organoaminodisilane precursor described hereincomprises at least one organoaminodisilane precursor comprising a Si—Nbond, a Si—Si bond, and a Si—H₂ group represented by the followingFormula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring. In certain embodiments such as in FormulaI, R¹, R², R³, and R⁴ are the same with the proviso that they cannotboth be iso-propyl. In other embodiments, R¹, R², R³, and R² aredifferent. In one embodiment, any one or all of R¹ and R², or R³ and R⁴,or R¹ and R³, or R² and R⁴ are selected from a linear or branched C₃ toC₆ alkyl group and are linked to form a cyclic ring. In yet furtherembodiments, none of R¹ and R², R³ and R⁴, R¹ and R³, and R² and R⁴ arelinked together to form a ring.

In another aspect, there is provided a composition comprising: (a) atleast one organoaminodisilane precursor comprising a Si—N bond, a Si—Sibond, and a Si—H₂ group represented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; and (b) a solvent. In certain embodimentssuch as in Formula I, R¹, R², R³, and R⁴ are the same with the provisothat they cannot both be iso-propyl. In other embodiments, R¹, R², R³,and R⁴ are different. In one embodiment, any one or all of R¹ and R², R³and R⁴, R¹ and R³, or R² and R⁴ are selected from a linear or branchedC₃ to C₆ alkyl group and are linked to form a cyclic ring. In the yetfurther embodiments, none of R¹ and R², or R³ and R⁴, or R¹ and R³, orR² and R⁴ are linked together to form a ring. In certain embodiments ofthe composition described herein, exemplary solvent(s) can include,without limitation, ether, tertiary amine, alkyl hydrocarbon, aromatichydrocarbon, tertiary aminoether, and combinations thereof. In certainembodiments, the difference between the boiling point of the solvent anda boiling point of the organoaminodisilane is 40° C. or less.

In another aspect, there is provided a method for forming asilicon-containing film on at least one surface of a substratecomprising:

providing the at least one surface of the substrate in a reactionchamber; and

forming the silicon-containing film on the at least one surface by adeposition process chosen from a chemical vapor deposition process andan atomic layer deposition process at least one organoaminodisilaneprecursor comprising a Si—N bond, a Si—Si bond, and a Si—H₂ grouprepresented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring.

In another aspect, there is provided a method of forming a silicon oxidefilm via an atomic layer deposition (ALD) process or an ALD-likeprocess, the method comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor an at least one organoaminodisilaneprecursor selected from an at least one organoaminodisilane precursorcomprising a Si—N bond, a Si—Si bond, and a Si—H₂ group represented bythe following formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring;

c. purging the reactor with a purge gas;

d. introducing an oxygen-containing source into the reactor;

e. optionally purging the reactor with a purge gas; and

wherein steps b through e are repeated until a desired thickness of thefilm is obtained.

In another aspect, there is provided a method of forming a silicon oxidefilm via plasma enhanced atomic layer deposition process, the methodcomprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor an oxygen source and an at least oneorganoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, anda Si—H₂ group represented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring;

c. purging the reactor with a purge gas along with the oxygen-containingsource;

d. applying RF plasma;

e. purging the reactor with a purge gas or pumping the reactor to removea reaction by-product; and wherein steps b through e are repeated untila desired thickness of the film is obtained.

In a further aspect, there is provided a method of forming a siliconoxide film onto at least a surface of a substrate using a CVD processcomprising:

a. providing a substrate in a reactor;

b. introducing into the reactor an at least one organoaminodisilaneprecursor comprising a Si—N bond, a Si—Si bond, and a Si—H₂ grouprepresented by the following formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; and

c. providing simultaneously an oxygen-containing source to deposit thesilicon oxide film onto the at least one surface of a substrate.

In another aspect, there is provided a method of forming a siliconnitride film via an atomic layer deposition or ALD-like process, themethod comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor an at least one organoaminodisilaneprecursor comprising a Si—N bond, a Si—Si bond, and a Si—H₂ grouprepresented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring;

c. purging the reactor with a purge gas;

d. introducing a nitrogen-containing source into the reactor;

e. purging the reactor with a purge gas; and wherein the steps b throughe are repeated until a desired thickness of the silicon nitride film isobtained.

In another aspect, there is provided a method of forming a siliconnitride via plasma enhanced atomic layer deposition or plasma enhancedALD-like process, the method comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor a nitrogen-containing source along withan at least one organoaminodisilane precursor comprising a Si—N bond, aSi—Si bond, and a Si—H₂ group represented by the following Formula Ibelow:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, and a C₆ to C₁₀ aryl group; R² and R⁴ are eachindependently selected from a hydrogen, a linear or branched C₁ to C₁₀alkyl group, a linear or branched C₃ to C₁₀ alkenyl group, a linear orbranched C₃ to C₁₀ alkynyl group, a C₁ to C₆ dialkylamino group, and aC₆ to C₁₀ aryl group; and wherein any one, all, or none of R¹ and R², R³and R⁴, R¹ and R³, or R² and R⁴ are linked together to form a ringselected from a substituted or unsubstituted aromatic ring or asubstituted or unsubstituted aliphatic ring;

c. purging the reactor with a purge gas along with thenitrogen-containing source;

d. applying RF plasma;

e. purging the reactor with a purge gas or pumping the reactor to removea reaction by-product; and wherein the steps b through e are repeateduntil a desired thickness of the film is obtained.

In a further aspect, there is provided a method of forming a siliconnitride film onto at least a surface of a substrate using a CVD processcomprising:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one organoaminodisilaneprecursor comprising a Si—N bond, a Si—Si bond, and a Si—H₂ grouprepresented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; and

c. providing a nitrogen-containing source wherein the at least oneorganoaminodisilane precursor and the nitrogen-containing source reactto deposit the film comprising both silicon and nitrogen onto the atleast one surface.

In a further embodiment of the method described herein, the process isdepositing amorphous or crystalline silicon film using a cyclic CVDmethod. In this embodiment, the method comprises:

placing one or more substrates into a reactor which is heated to one ormore temperatures ranging from ambient temperature to about 700° C.;;

introducing at least one organoaminodisilane precursor comprising a Si—Nbond, a Si—Si bond, and a Si—H₂ groups represented by the followingFormula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; and

optionally providing a reducing agent source into the reactor to atleast partially react with the at least one organoaminodisilaneprecursor and deposit a silicon-containing film onto the one or moresubstrates. In embodiments wherein a reducing agent is used, thereducing agent is selected from the group consisting of hydrogen,hydrogen plasma, and hydrogen chloride. In certain embodiments of themethod, the reactor is maintained at a pressure ranging from 10 mTorr to760 Torr during the deposition process. The above steps define one cyclefor the method described herein, and the cycle of steps can be repeateduntil the desired thickness of a film is obtained.

In another aspect, there is provided a method of depositing amorphous orcrystalline silicon film via an atomic layer deposition or ALD-like orcyclic chemical vapor deposition process, the method comprising thesteps of:

a. providing a substrate in a reactor;

b. introducing into the reactor an at least one organoaminodisilaneprecursor comprising a Si—N bond, a Si—Si bond, and a Si—H₂ grouprepresented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring;

c. purging the reactor with a purge gas or pumping the reactor to removeunreacted organoaminodisilane and by-products wherein the steps b and care repeated until a desired thickness of the silicon film is obtained.In this or other embodiments, the thickness of the silicon film can begreater than 1 Å, or from 1 to 10,000 Å, or from 1 to 1000 Å, or from 1to 100 Å.

In another aspect, a vessel for depositing a silicon-containing filmcomprising one or more organoaminodisilane precursor having Formula I isdescribed herein. In one particular embodiment, the vessel comprises atleast one pressurizable vessel (preferably of stainless steel) fittedwith the proper valves and fittings to allow the delivery of one or moreprecursors to the reactor for a CVD or an ALD process.

DETAILED DESCRIPTION OF THE INVENTION

The organoaminodisilanes described herein are used as precursors to formstoichiometric and non-stoichiometric silicon containing films such as,but not limited to, amorphous silicon, crystalline silicon, siliconoxide, silicon oxycarbide, silicon nitride, silicon oxynitride, andsilicon oxycarbonitride. These precursors can also be used, for example,as dopants for metal containing films. The organoaminodisilaneprecursors used in semi-conductor processes are typically high purityvolatile liquid precursor chemical that are vaporized and delivered to adeposition chamber or reactor as a gas to deposit a silicon containingfilm via CVD or ALD processes for semiconductor devices. The selectionof precursor materials for deposition depends upon the desired resultantsilicon-containing material or film. For example, a precursor materialmay be chosen for its content of chemical elements, its stoichiometricratios of the chemical elements, and/or the resultant silicon containingfilm or coating that are formed under CVD. The precursor material mayalso be chosen for various other characteristics such as cost,relatively low toxicity, handling characteristics, ability to maintainliquid phase at room temperature, volatility, molecular weight, and/orother considerations. In certain embodiments, the precursors describedherein can be delivered to the reactor system by any number of means,preferably using a pressurizable stainless steel vessel fitted with theproper valves and fittings, to allow the delivery of liquid phaseprecursor to the deposition chamber or reactor.

The organoaminodisilane precursors described herein exhibit a balance ofreactivity and stability that makes them ideally suitable as CVD or ALDprecursors in microelectronic device manufacturing processes. Withregard to reactivity, certain precursors may have boiling points thatare too high to be vaporized and delivered to the reactor to bedeposited as a film on a substrate. Precursors having higher relativeboiling points require that the delivery container and lines need to beheated at or above the boiling point of the precursor under a givenvacuum to prevent condensation or particles from forming in thecontainer, lines, or both. With regard to stability, other precursorsmay form silane (SiH₄) or disilane (Si₂H₆) as they degrade. Silane ispyrophoric at room temperature or it can spontaneously combust whichpresents safety and handling issues. Moreover, the formation of silaneor disilane and other by-products decreases the purity level of theprecursor and changes as small as 1-2% in chemical purity may beconsidered unacceptable for reliable semiconductor manufacture. Incertain embodiments, the organoaminodisilane precursors having Formula Idescribed herein comprise 2% or less by weight, or 1% or less by weight,or 0.5% or less by weight of by-product (such as the correspondingbis-disilane byproduct) after being stored for a time period of 6 monthsor greater, or one year or greater which is indicative of being shelfstable. In addition to the foregoing advantages, in certain embodiments,such as for depositing a silicon oxide or silicon nitride or siliconfilm using an ALD, ALD-like, PEALD, or CCVD deposition method, theorganoaminodisilane precursor described herein may be able to deposithigh density materials at relatively low deposition temperatures, e.g.,500° C. or less, or 400° C. or less, 300° C. or less, 200° C. or less,100° C. or less, or 50° C. or less. In one particular embodiment, theorganoaminodisilane precursor, such as di-iso-propylaminodisilane,di-sec-butylaminodisilane, or 2,6-dimethylpiperidinodisilane can be usedto deposit a silicon-containing film via ALD or PEALD at a temperatureas low as 50° C. or less or at room temperature (e.g., 25° C.).

In one embodiment, described herein is a composition for forming asilicon-containing film comprising: an organoaminodisilane havingFormula I described herein and a solvent(s). Without being bound by anytheory, it is believed that composition described herein may provide oneor more advantages compared to pure organoaminodisilane. Theseadvantages include: better usage of the organoaminodisilane insemiconductor processes, better stability over long term storage,cleaner evaporation by flash vaporization, and/or overall more stabledirect liquid injection (DLI) chemical vapor deposition process. Theweight percentage of the organoaminodisilane in the composition canrange from 1 to 99% with the balance being solvent(s) wherein thesolvent(s) does not react with the organoaminodisilane and has a boilingpoint similar to the organoaminodisilane. With regard to the latter, thedifference between the boiling points of the organoaminodisilane andsolvent(s) in the composition is 40° C. or less, more preferably 20° C.or less, or 10° C. or less. Exemplary compositions include, but notlimited to, a mixture of di-iso-propylaminodisilane (b.p. about 157° C.)and octane (b.p. 125 to 126° C.), a mixture ofdi-iso-propylaminodisilane (b.p. about 157° C.) and ethylcyclohexane(b.p. 130-132° C.), di-iso-propylaminodisilane (b.p. about 157° C.) andtoluene (b.p. 115° C.), a mixture of di-sec-butylaminodisilane anddecane (b.p. 174° C.), a mixture of di-sec-butylaminodisilane anddecane, a mixture of di-sec-butylaminodisilane and2,2′-oxybis(N,N-dimethylethanamine (b.p., 189° C.).

In one aspect, there is provided certain precursors ororganoaminodisilanes comprising a Si—N bond, a Si—Si bond, and a Si—H₂group represented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring. In certain embodiments of Formula I, R¹,R², R³, and R⁴ are the same with the proviso that they cannot both beiso-propyl. In other embodiments, R¹, R², R³, and R² are different. Inone embodiment, any one or all of R¹ and R² or R³ and R⁴ or R¹ and R³ orR² and R⁴ are selected from a linear or branched C₃ to C₆ alkyl groupand are linked to form a cyclic ring. In an alternative embodiment, R¹and R², or R³ and R⁴, or R¹ and R³, or R² and R⁴ are not linked togetherto form a ring.

In the formulae described herein and throughout the description, theterm “alkyl” denotes a linear, or branched functional group having from1 to 10 or 1 to 6 carbon atoms. Exemplary alkyl groups include, but arenot limited to, methyl (Me), ethyl (Et), propyl (n-Pr), isopropyl(iso-Pr or ^(i)Pr), butyl (n-Bu), isobutyl (^(s)Bu), sec-butyl (^(s)Bu),tert-butyl (^(t)Bu), pentyl, iso-pentyl, tert-pentyl (amyl), hexyl,iso-hexyl, and neo-hexyl. In certain embodiments, the alkyl group mayhave one or more functional groups such as, but not limited to, analkoxy group, a dialkylamino group or combinations thereof, attachedthereto. In other embodiments, the alkyl group does not have one or morefunctional groups attached thereto.

In the formulae described herein and throughout the description, theterm “cyclic alkyl” denotes a cyclic functional group having from 3 to10 or from 4 to 10 carbon atoms or from 5 to 10 carbon atoms. Exemplarycyclic alkyl groups include, but are not limited to, cyclobutyl,cyclopentyl, cyclohexyl, and cyclooctyl groups.

In the formulae described herein and throughout the description, theterm “aryl” denotes an aromatic cyclic functional group having from 5 to12 carbon atoms or from 6 to 10 carbon atoms. Exemplary aryl groupsinclude, but are not limited to, phenyl, benzyl, chlorobenzyl, tolyl,and o-xylyl.

In the formulae described herein and throughout the description, theterm “alkenyl group” denotes a group which has one or more carbon-carbondouble bonds and has from 3 to 10 or from 3 to 6 or from 3 to 4 carbonatoms.

In the formulae described herein and throughout the description, theterm “alkynyl group” denotes a group which has one or more carbon-carbontriple bonds and has from 3 to 10 or from 3 to 6 or from 3 to 4 carbonatoms.

In the formulae described herein and throughout the description, theterm “alkoxy” denotes an alkyl group which has is linked to an oxygenatom (e.g., R—O) and may have from 1 to 10, or from 1 to 6, or from 1 to4 carbon atoms. Exemplary alkoxy groups include, but are not limited to,methoxy (—OCH₃), ethoxy(—OCH₂CH₃), n-propoxy (—OCH₂CH₂CH₃), andiso-propoxy (—OCHMe₂).

In the formulae described herein and throughout the description, theterm “dialkylamine group” denotes a group which has two alkyl groupsattached to a nitrogen atom and has from 1 to 10 or from 2 to 6 or from2 to 4 carbon atoms.

In the formulae described herein and throughout the description, theterm “electron withdrawing group” as used herein describes an atom orgroup thereof that acts to draw electrons away from the Si—N bond.Examples of suitable electron withdrawing groups or substituentsinclude, but are not limited to, nitriles (CN). In certain embodiments,electron withdrawing substituent can be adjacent to or proximal to N inany one of Formula I. Further non-limiting examples of an electronwithdrawing group includes F, Cl, Br, I, CN, NO₂, RSO, and/or RSO₂wherein R can be a C₁ to C₁₀ alkyl group such as, but not limited to, amethyl group or another group.

In the formulas above and through the description, the term“unsaturated” as used herein means that the functional group,substituent, ring or bridge has one or more carbon double or triplebonds. An example of an unsaturated ring can be, without limitation, anaromatic ring such as a phenyl ring. The term “saturated” means that thefunctional group, substituent, ring or bridge does not have one or moredouble or triple bonds.

In certain embodiments, one or more of the alkyl group, alkenyl group,alkynyl group, alkoxy group, dialkylamino group, aryl group, and/orelectron withdrawing group in Formula I may be substituted or have oneor more atoms or group of atoms substituted in place of, for example, ahydrogen atom. Exemplary substituents include, but are not limited to,oxygen, sulfur, halogen atoms (e.g., F, Cl, I, or Br), nitrogen, andphosphorous. In other embodiments, one or more of the alkyl group,alkenyl group, alkynyl group, alkoxy group, dialkylamino aryl group,and/or electron withdrawing group in Formula I may be unsubstituted. Incertain embodiments, the organoaminodisilane precursor having Formula Ihas one or more substituents comprising oxygen atoms. In theseembodiments, the need for an oxygen-containing source during thedeposition process may be avoided. In other embodiments, the at leastone organoaminodisilane precursor having Formula I has one or moresubstituents comprising oxygen atoms also uses an oxygen-containingsource. In this or other embodiments, any one or more of substituents R¹and R² or R³ and R⁴ or R¹ and R³ or R² and R⁴ are linked via an oxygenatom in Formula I to form a ring structure.

In certain embodiments, any one or all of R¹ and R² or R³ and R⁴ or R¹and R³ or R² and R⁴ are linked in Formula I to form a ring structure. Inthese embodiments, R², R⁴, or both are not hydrogen. For example in anembodiment where R¹ and R² are linked together to form a ring, R² mayinclude a bond (instead of a hydrogen substituent) for linking to R¹.Thus, in the example above R² may be selected from a C₁ to C₁₀ alkenylmoiety or a linear or branched C₁ to C₁₀ alkynyl moiety. In theseembodiments, the ring structure can be unsaturated such as, for example,a cyclic alkyl ring, or saturated, for example, an aryl ring. Further,in these embodiments, the ring structure can also be substituted orsubstituted. In one particular embodiment, the organoaminodisilanecomprises an aliphatic, substituted ring such as a heteratomic cyclicfunctional group having from 5 to 10 carbon atoms and at least onenitrogen atom. Exemplary of these particular embodiments include, butare not limited to, 1,2-bis(pyrrolidino)disilane wherein R¹=propyl andR²=Me, 1,2-bis(piperidino)disilane wherein R¹=propyl and R²=Et,2,6-dimethylpiperidinodisilane R¹=iso-propyl and R²=sec-butyl, and2,5-dimethylpyrrolidinodilane R¹=iso-propyl and R²=iso-propyl.

In other embodiments, none of R¹ and R² or R³ and R⁴ or R¹ and R³ or R²and R⁴ are linked in Formula I.

The following Table 1 provides some non-limiting examples of certainembodiments of the organoaminodisilanes having Formula I:

TABLE 1 Exemplary Organoaminodisilane Having Formula I

Without being bound by theory, it is believed that organoaminodisilaneprecursors having Formula I described herein comprising a Si—N bond, aSi—Si bond and a SiH₂ group are advantageous over knownorganoaminodisilane precursors containing only Si—N and Si—Si bondsbecause of it has five Si—H groups and one Si—Si bond which make themmore reactive, allowing deposition temperature to be lower such as below400° C. than conventional precursors such as chlorosilanes,hexachlorodisilane, or organoaminosilanes.

In certain embodiments, the organoaminodisilanes having Formula I can beprepared by reacting a 1,2-dichlorodisilane (DCDS) with an amine havingthe following Formula II or III.

In Formula II or III, R¹, R², R³, and R⁴ are the same as thesubstituents described above in Formula I. The following Equation 1provides a non-limiting example of a reaction schemes or synthesis routewhich may be used to make the organoaminodisilanes having Formula I asdescribed herein. The reaction in Equation (1) can be conducted with(e.g., in the presence of) or without (e.g., in the absence of) organicsolvents. In embodiments wherein an organic solvent is used, examples ofsuitable organic solvents include, but are not limited to, hydrocarbonsuch as hexanes, octane, toluene, and ethers such as diethylether andtetrahydrofuran (THF). In these or other embodiments, the reactiontemperature is in the range of from about −70° C. to the boiling pointof the solvent employed if a solvent is used. The resultingorganoaminodisilane can be purified, for example, via vacuumdistillation after removing all by-products as well as any solvent(s) ifpresent.

Equation 1 above is one example of a synthetic route to make theorganoaminodisilanes having Formula I involving a reaction between1,2-dihalodisilane (XSiH₂SiH₂X wherein X═Cl, Br, I) and a secondaryamine presented in Formula II. Other synthetic routes may be alsoemployed to make the organoaminodisilanes described herein such as, forexample, reducing diaminotetrachlorodisilanes with metal hydride ordisproportionation of diaminocholordisilane or reacting disilane withsecondary amine in presence of catalyst.

The method used to form the silicon-containing films or coatings aredeposition processes. Examples of suitable deposition processes for themethod disclosed herein include, but are not limited to, cyclic CVD(CCVD), MOCVD (Metal Organic CVD), thermal chemical vapor deposition,plasma enhanced chemical vapor deposition (“PECVD”), high density PECVD,photon assisted CVD, plasma-photon assisted (“PPECVD”), cryogenicchemical vapor deposition, chemical assisted vapor deposition,hot-filament chemical vapor deposition, CVD of a liquid polymerprecursor, deposition from supercritical fluids, and low energy CVD(LECVD). In certain embodiments, the metal containing films aredeposited via atomic layer deposition (ALD), plasma enhanced ALD (PEALD)or plasma enhanced cyclic CVD (PECCVD) process. As used herein, the term“chemical vapor deposition processes” refers to any process wherein asubstrate is exposed to one or more volatile precursors, which reactand/or decompose on the substrate surface to produce the desireddeposition. As used herein, the term “atomic layer deposition process”refers to a self-limiting (e.g., the amount of film material depositedin each reaction cycle is constant), sequential surface chemistry thatdeposits films of materials onto substrates of varying compositions.Although the precursors, reagents and sources used herein may besometimes described as “gaseous”, it is understood that the precursorscan be either liquid or solid which are transported with or without aninert gas into the reactor via direct vaporization, bubbling orsublimation. In some case, the vaporized precursors can pass through aplasma generator. In one embodiment, the silicon-containing film isdeposited using an ALD process. In another embodiment, thesilicon-containing film is deposited using a CCVD process. In a furtherembodiment, the silicon-containing film is deposited using a thermal CVDprocess. The term “reactor” as used herein, includes without limitation,reaction chamber or deposition chamber.

In certain embodiments, the method disclosed herein avoids pre-reactionof the precursors by using ALD or CCVD methods that separate theprecursors prior to and/or during the introduction to the reactor. Inthis connection, deposition techniques such as ALD or CCVD processes areused to deposit the silicon-containing film. In one embodiment, the filmis deposited via an ALD process by exposing the substrate surfacealternatively to the one or more the silicon-containing precursor,oxygen-containing source, nitrogen-containing source, or other precursoror reagent. Film growth proceeds by self-limiting control of surfacereaction, the pulse length of each precursor or reagent, and thedeposition temperature. However, once the surface of the substrate issaturated, the film growth ceases. The ALD-like process is definedherein as a cyclic CVD process that provides a high conformalsilicon-containing film such as amorphous silicon, silicon oxide, carbondoped silicon oxide, silicon carbonitride, silicon nitride on asubstrate as shown by having a percentage of non-uniformity of 5% orless, a deposition rate of 1 Å or greater per cycle, or both.

In certain embodiments, the method described herein further comprisesone or more additional silicon-containing precursors other than theorganoaminodisilane precursor having the above Formula I. Examples ofadditional silicon-containing precursors include, but are not limitedto, monoaminosilane (e.g., di-iso-propylaminosilane,di-sec-butylaminosilane, phenylmethylaminosilane; organo-siliconcompounds such as trisilylamine (TSA); monoaminosilane(di-iso-propylaminosilane, di-sec-butylaminosilane,phenylmethylaminosilane); siloxanes (e.g., hexamethyl disiloxane (HMDSO)and dimethyl siloxane (DMSO)); organosilanes (e.g., methylsilane,dimethylsilane, diethylsilane, vinyl trimethylsilane, trimethylsilane,tetramethylsilane, ethylsilane, disilylmethane, 2,4-disilapentane,1,4-disilabutane, 2,5-disilahexane, 2,2-disilylpropane,1,3,5-trisilacyclohexane and fluorinated derivatives of thesecompounds); phenyl-containing organo-silicon compounds (e.g.,dimethylphenylsilane and diphenylmethylsilane); oxygen-containingorgano-silicon compounds, e.g., dimethyldimethoxysilane;1,3,5,7-tetramethylcyclotetrasiloxane; 1,1,3,3-tetramethyldisiloxane;1,3,5,7-tetrasila-4-oxo-heptane; 2,4,6,8-tetrasila-3,7-dioxo-nonane;2,2-dimethyl-2,4,6,8-tetrasila-3,7-dioxo-nonane;octamethylcyclotetrasiloxane; [1,3,5,7,9]-pentamethylcyclopentasiloxane;1,3,5,7-tetrasila-2,6-dioxo-cyclooctane; hexamethylcyclotrisiloxane;1,3-dimethyldisiloxane; 1,3,5,7,9-pentamethylcyclopentasiloxane;hexamethoxydisiloxane, and fluorinated derivatives of these compounds.

Depending upon the deposition method, in certain embodiments, the one ormore silicon-containing precursors may be introduced into the reactor ata predetermined molar volume, or from about 0.1 to about 1000micromoles. In this or other embodiments, the silicon-containing and/ororganoaminodisilane precursor may be introduced into the reactor for apredetermined time period. In certain embodiments, the time periodranges from about 0.001 to about 500 seconds.

In certain embodiments, the silicon-containing films deposited using themethods described herein are formed in the presence of anoxygen-containing source, or precursor comprising oxygen. Anoxygen-containing source may be introduced into the reactor in the formof at least one oxygen-containing source and/or may be presentincidentally in the other precursors used in the deposition process.Suitable oxygen-containing source gases may include, for example, water(H₂O) (e.g., deionized water, purifier water, and/or distilled water),oxygen (O₂), oxygen plasma, ozone (O₃), NO, N₂O, NO₂, carbon monoxide(CO), carbon dioxide (CO₂) and combinations thereof. In certainembodiments, the oxygen-containing source comprises an oxygen-containingsource gas that is introduced into the reactor at a flow rate rangingfrom about 1 to about 2000 square cubic centimeters (sccm) or from about1 to about 1000 sccm. The oxygen-containing source can be introduced fora time that ranges from about 0.1 to about 100 seconds. In oneparticular embodiment, the oxygen-containing source comprises waterhaving a temperature of 10° C. or greater. In embodiments wherein thefilm is deposited by an ALD or a cyclic CVD process, the precursor pulsecan have a pulse duration that is greater than 0.01 seconds, and theoxygen-containing source can have a pulse duration that is less than0.01 seconds, while the water pulse duration can have a pulse durationthat is less than 0.01 seconds. In yet another embodiment, the purgeduration between the pulses that can be as low as 0 seconds or iscontinuously pulsed without a purge in-between.

In certain embodiments, the silicon-containing films comprise siliconand nitrogen. In these embodiments, the silicon-containing filmsdeposited using the methods described herein are formed in the presenceof nitrogen-containing source. A nitrogen-containing source may beintroduced simultaneously or sequentially into the reactor in the formof at least one nitrogen source and/or may be present incidentally inthe other precursors used in the deposition process. Suitablenitrogen-containing source gases may include, for example, ammonia,hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen,nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/hydrogenplasma, and mixture thereof. In certain embodiments, thenitrogen-containing source comprises an ammonia plasma orhydrogen/nitrogen plasma source gas that is introduced into the reactorat a flow rate ranging from about 1 to about 2000 square cubiccentimeters (sccm) or from about 1 to about 1000 sccm. Thenitrogen-containing source can be introduced for a time that ranges fromabout 0.1 to about 100 seconds. In embodiments wherein the film isdeposited by an ALD or a cyclic CVD process, the precursor pulse canhave a pulse duration that is greater than 0.01 seconds, and thenitrogen-containing source can have a pulse duration that is less than0.01 seconds, while the water pulse duration can have a pulse durationthat is less than 0.01 seconds. In yet another embodiment, the purgeduration between the pulses that can be as low as 0 seconds or iscontinuously pulsed without a purge in-between.

The deposition methods disclosed herein may involve one or more purgegases. The purge gas, which is used to purge away unconsumed reactantsand/or reaction byproducts, is an inert gas that does not react with theprecursors. Exemplary purge gases include, but are not limited to, argon(Ar), nitrogen (N₂), helium (He), neon, hydrogen (H₂), and mixturesthereof. In certain embodiments, a purge gas such as Ar or nitrogen issupplied into the reactor at a flow rate ranging from about 10 to about2000 sccm for about 0.1 to 1000 seconds, thereby purging the unreactedmaterial and any byproduct that may remain in the reactor.

The respective step of supplying the precursors, oxygen-containingsource, the nitrogen-containing source, and/or other precursors, sourcegases, and/or reagents may be performed by changing the time forsupplying them to change the stoichiometric composition of the resultingsilicon-containing film or changing the order of steps.

Energy is applied to the at least one of the precursor,nitrogen-containing source, reducing agent, other precursors orcombination thereof to induce reaction and to form thesilicon-containing film or coating on the substrate. Such energy can beprovided by, but not limited to, thermal, plasma, pulsed plasma, heliconplasma, high density plasma, inductively coupled plasma, X-ray, e-beam,photon, remote plasma methods, and combinations thereof. In certainembodiments, a secondary RF frequency source can be used to modify theplasma characteristics at the substrate surface. In embodiments whereinthe deposition involves plasma, the plasma-generated process maycomprise a direct plasma-generated process in which plasma is directlygenerated in the reactor, or alternatively a remote plasma-generatedprocess in which plasma is generated outside of the reactor and suppliedinto the reactor.

The organoaminodisilane precursors having Formula I and/or othersilicon-containing precursors may be delivered to the reaction chambersuch as a CVD or ALD reactor in a variety of ways. In one embodiment, aliquid delivery system may be utilized. In an alternative embodiment, acombined liquid delivery and flash vaporization process unit may beemployed, such as, for example, the turbo vaporizer manufactured by MSPCorporation of Shoreview, Minn., to enable low volatility materials tobe volumetrically delivered, which leads to reproducible transport anddeposition without thermal decomposition of the precursor. In liquiddelivery formulations, the precursors described herein may be deliveredin neat liquid form, or alternatively, may be employed in solventformulations or compositions comprising same. Thus, in certainembodiments the precursor formulations may include solvent component(s)of suitable character as may be desirable and advantageous in a givenend use application to form a film on a substrate.

For those embodiments relating to a composition comprising a solvent(s)and an organoaminodisilane precursor having Formula I described herein,the solvent or mixture thereof selected does not react with theorganoaminodisilane. The amount of solvent by weight percentage in thecomposition ranges from 0.5% by weight to 99.5% or from 10% by weight to75%. In this or other embodiments, the solvent has a boiling point(b.p.) similar to the b.p. of the organoaminodisilane of Formula I orthe difference between the b.p. of the solvent and the b.p. of theorganoaminodisilane of Formula I is 40° C. or less, 30° C. or less, or20° C. or less, or 10° C. Alternatively, the difference between theboiling points ranges from any one or more of the following end-points:0, 10, 20, 30, or 40° C. Examples of suitable ranges of b.p. differenceinclude without limitation, 0 to 40° C., 20° to 30° C., or 10° to 30° C.Examples of suitable solvents in the compositions include, but are notlimited to, an ether (such as 1,4-dioxane, dibutyl ether), a tertiaryamine (such as pyridine, 1-methylpiperidine, 1-ethylpiperidine,N,N′-Dimethylpiperazine, N,N,N′,N′-Tetramethylethylenediamine), anitrile (such as benzonitrile), an alkyl hydrocarbon (such as octane,nonane, dodecane, ethylcyclohexane), an aromatic hydrocarbon (such astoluene, mesitylene), a tertiary aminoether (such asbis(2-dimethylaminoethyl)ether), or mixtures thereof. Some non-limitingexemplary compositions include, but not limited to, a compositioncomprising di-iso-propylaminodisilane (b.p. about 157° C.) and octane(b.p. 125 to 126° C.); a composition comprisingdi-iso-propylaminodisilane (b.p. about 157° C.) and ethylcyclohexane(b.p. 130-132° C.); a composition comprising di-iso-propylaminodisilane(b.p. about 157° C.) and toluene (b.p. 115° C.); a compositioncomprising di-sec-butylaminodisilane and decane (b.p. 174° C.); and acomposition comprising di-sec-butylaminodisilane and2,2′-oxybis(N,N-dimethylethanamine) (b.p., 189° C.).

In another embodiment, a vessel for depositing a silicon-containing filmcomprising one or more organoaminodisilane precursor having Formula I isdescribed herein. In one particular embodiment, the vessel comprises atleast one pressurizable vessel (preferably of stainless steel) fittedwith the proper valves and fittings to allow the delivery of one or moreprecursors to the reactor for a CVD or an ALD process. In this or otherembodiments, the organoaminodisilane precursor having any of Formula Iis provided in a pressurizable vessel comprised of stainless steel andthe purity of the precursor is 98% by weight or greater or 99.5% orgreater which is suitable for the majority of semiconductorapplications. In certain embodiments, such vessels can also have meansfor mixing the precursors with one or more additional precursor ifdesired. In these or other embodiments, the contents of the vessel(s)can be premixed with an additional precursor. Alternatively, theorganoaminodisilane precursor and/or other precursor can be maintainedin separate vessels or in a single vessel having separation means formaintaining the organoaminodisilane precursor and other precursorseparate during storage.

In one embodiment of the method described herein, a cyclic depositionprocess such as CCVD, ALD, or PEALD may be employed, wherein at leastone silicon-containing precursor selected from an organoaminodisilaneprecursor having the formula described herein and optionally anitrogen-containing source such as, for example, ammonia, hydrazine,monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen,ammonia plasma, nitrogen plasma, nitrogen/hydrogen plasma are employed.

In certain embodiments, the gas lines connecting from the precursorcanisters to the reaction chamber are heated to one or more temperaturesdepending upon the process requirements and the container of theorganoaminodisilane precursor having the formula I described herein iskept at one or more temperatures for bubbling. In other embodiments, asolution comprising the at least one silicon-containing precursor havingthe formula described herein is injected into a vaporizer kept at one ormore temperatures for direct liquid injection.

A flow of argon and/or other gas may be employed as a carrier gas tohelp deliver the vapor of the at least one organoaminodisilane precursorto the reaction chamber during the precursor pulsing.

In a typical ALD or CCVD process, the substrate such as a silicon ormetal nitride substrate or a flexible substrate is heated on a heaterstage in a reaction chamber that is exposed to the silicon-containingprecursor initially to allow the organoaminodisilane to chemicallyadsorb onto the surface of the substrate. A purge gas such as nitrogen,argon purges away unabsorbed excess organoaminodisilane from the processchamber. After sufficient purging, an oxygen-containing source may beintroduced into reaction chamber to react with the absorbed surfacefollowed by another gas purge to remove reaction by-products from thechamber. The process cycle can be repeated to achieve the desired filmthickness. In other embodiment, pumping under vacuum can be used toremove unabsorbed excess organoaminodisilane from the process chamber,after sufficient evacuation under pumping, an oxygen-containing sourcemay be introduced into reaction chamber to react with the absorbedsurface followed by another pumping down purge to remove reactionby-products from the chamber. Yet, in another embodiment, theorganoaminodisilane and the oxygen-containing source can be co-flowedinto reaction chamber to react on the substrate surface to depositsilicon oxide.

In this or other embodiments, it is understood that the steps of themethods described herein may be performed in a variety of orders, may beperformed sequentially or concurrently (e.g., during at least a portionof another step), and any combination thereof. The respective step ofsupplying the precursors and the nitrogen-containing source gases may beperformed by varying the duration of the time for supplying them tochange the stoichiometric composition of the resultingsilicon-containing film.

In another embodiment of the method disclosed herein, the filmscomprising silicon and nitrogen are formed using an ALD, a PEALD, a CCVDor a PECCVD deposition method that comprises the steps of:

a. providing a substrate in an ALD reactor;

b. introducing into the ALD reactor an at least one organoaminodisilaneprecursor comprising Si—N bond, Si—Si bond, and Si—H₂ groups representedby the following formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring;

c. chemisorbing the at least one organoaminodisilane precursor onto asubstrate;

d. purging away the unreacted at least one organoaminodisilane precursorusing a purge gas;

e. providing a nitrogen-containing source to onto the heated substrateto react with the sorbed at least one organoaminodisilane precursor; and

f. optionally purging away any unreacted nitrogen-containing source. Incertain embodiments of the method described herein, steps b through fare repeated until a desired thickness of film is obtained.

In another embodiment of the method disclosed herein, thesilicon-containing films is formed using a ALD deposition method thatcomprises the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor at least one organoaminodisilaneprecursor comprising Si—N bond, Si—Si bond, and Si—H₂ groups representedby the following formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring;

c. chemisorbing the at least one organoaminodisilane precursor onto asubstrate;

d. purging away the unreacted at least one organoaminodisilane precursorusing a purge gas or pumping;

e. providing an oxygen-containing source or a nitrogen source into theonto the heated substrate to react with the sorbed at least oneorganoaminodisilane precursor; and

f. optionally purging away any unreacted oxygen-containing source ornitrogen source. In certain embodiments of the method described herein,steps b through f are repeated until a desired thickness of film isobtained.

In another aspect, there is provided a method of forming asilicon-containing film via plasma enhanced atomic layer depositionprocess, the method comprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor oxygen along with an at least oneorganoaminodisilane precursor selected from an at least oneorganoaminodisilane precursor comprising Si—N bond, Si—Si bond, andSi—H₂ groups represented by the following formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring;

c. purging the reactor with a purge gas along with oxygen;

d. applying RF plasma;

e. purging the reactor with a purge gas or pumping the reactor to removereaction by-product; and wherein steps b through e are repeated until adesired thickness of the film is obtained.

The above steps define one cycle for the method described herein; andthe cycle can be repeated until the desired thickness of asilicon-containing film is obtained. In this or other embodiments, it isunderstood that the steps of the methods described herein may beperformed in a variety of orders, may be performed sequentially orconcurrently (e.g., during at least a portion of another step), and anycombination thereof. The respective step of supplying the precursors andoxygen-containing source or nitrogen source may be performed by varyingthe duration of the time for supplying them to change the stoichiometriccomposition of the resulting silicon-containing film, although alwaysusing oxygen in less than a stoichiometric amount relative to theavailable silicon.

For multi-component silicon-containing films, other precursors such assilicon-containing precursors, nitrogen-containing precursors, reducingagents, or other reagents can be alternately introduced into the reactorchamber.

In a further embodiment of the method described herein, thesilicon-containing film is deposited using a thermal CVD process. Inthis embodiment, the method comprises:

a. placing one or more substrates into a reactor which is heated to oneor more temperatures ranging from ambient temperature (e.g., 25° C.) toabout 700° C.;

b. introducing at least one organoaminodisilane precursor comprisingSi—N bond, Si—Si bond, and Si—H₂ groups represented by the followingformula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; and

c. providing simultaneously an oxygen-containing source into the reactorto at least partially react with the at least one organoaminodisilaneprecursor and deposit a silicon-containing film onto the one or moresubstrates.

In certain embodiments of the CVD method, the reactor is maintained at apressure ranging from 10 mTorr to 760 Torr during the depositionprocess. The above steps define one cycle for the method describedherein; and the cycle can be repeated until the desired thickness of asilicon-containing film is obtained. In this or other embodiments, it isunderstood that the steps of the methods described herein may beperformed in a variety of orders, may be performed sequentially orconcurrently (e.g., during at least a portion of another step), and anycombination thereof. The respective step of supplying the precursors andoxygen-containing source may be performed by varying the duration of thetime for supplying them to change the stoichiometric composition of theresulting silicon-containing film, although always using oxygen in lessthan a stoichiometric amount relative to the available silicon.

In a further embodiment of the method described herein, the process isdepositing an amorphous or a crystalline silicon film. In thisembodiment, the method comprises:

a. placing one or more substrates into a reactor which is heated to atemperature ranging from ambient temperature to about 700° C.;

b. introducing at least one organoaminodisilane precursor comprisingSi—N bond, Si—Si bond, and Si—H₂ groups represented by the followingformula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; and

b. providing a reducing agent source into the reactor to at leastpartially react with the at least one organoaminodisilane precursor anddeposit a silicon-containing film onto the one or more substrates. Inthese embodiments, the reducing agent is selected from the groupconsisting of hydrogen, hydrogen plasma, and hydrogen chloride.

In certain embodiments of the CVD method, the reactor is maintained at apressure ranging from 10 mTorr to 760 Torr during the depositionprocess. The above steps define one cycle for the method describedherein; and the cycle can be repeated until the desired thickness of afilm is obtained.

For multi-component silicon-containing films, other precursors such assilicon-containing precursors, nitrogen-containing precursors,oxygen-containing sources, nitrogen-containing source, reducing agents,and/or other reagents can be alternately introduced into the reactorchamber.

In a further embodiment of the method described herein, thesilicon-containing film is deposited using a thermal CVD process. Inthis embodiment, the method comprises:

a. placing one or more substrates into a reactor which is heated to atemperature ranging from ambient temperature to about 700° C.;

b. introducing at least one organoaminodisilane precursor comprisingSi—N bond, Si—Si bond, and Si—H₂ groups represented by the followingformula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; and

c. providing a nitrogen-containing source into the reactor to at leastpartially react with the at least one organoaminodisilane precursor anddeposit a silicon-containing film onto the one or more substrates. Incertain embodiments of the CVD method, the reactor is maintained at apressure ranging from 10 mTorr to 760 Torr during the depositionprocess.

In a further embodiment of the method described herein, theorganoaminodisilane precursors are used for depositing a siliconcontaining film which is an amorphous film, a crystalline silicon film,or a mixture thereof. In these embodiments, the silicon containing filmsis formed using a deposition method selected from ALD or cyclic CVD thatcomprises the steps of:

a. placing a substrates into a reactor which is heated to a temperatureranging from ambient temperature to about 700° C.;

b. introducing at least organoaminodisilane precursor comprising Si—Nbond, Si—Si bond, and Si—H₂ groups represented by the following formulaI below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring;

c. providing a reducing agent into the reactor to at least partiallyreact with the at least one organoaminodisilane precursor and deposit asilicon containing film onto the one or more substrates wherein thereducing agent is at least one selected from the group consisting ofhydrogen, hydrogen plasma, or hydrogen chloride. The above steps defineone cycle for the method described herein; and the cycle can be repeateduntil the desired thickness of a silicon containing film is obtained.The desired thickness of the film can range from 1 Å to 10,000 Å.

In another aspect, there is provided a method of depositing amorphous orcrystalline silicon film via an atomic layer deposition or cyclicchemical vapor deposition process or chemical vapor deposition attemperature lower than conventional silicon precursors, the methodcomprising the steps of:

a. providing a substrate in a reactor;

b. introducing into the reactor an at least one organoaminodisilaneprecursor comprising a Si—N bond, a Si—Si bond, and a Si—H₂ grouprepresented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring;

c. purging the reactor with a purge gas; and wherein steps b through care repeated until a desired thickness of the silicon film is obtained.

It is believed that the Formula I precursors described herein cangenerate H₂Si: di-radicals upon heating which can promote formationoligomers containing Si—Si bonds or anchoring on the surface of asubstrate. Those oligomers or anchored SiH₂ can further form amorphoussilicon films and importantly they can function as seed layer forsubsequent deposition of silicon or silicon oxide films

In certain embodiments, the organoaminodisilane precursors havingFormula I described herein can also be used as a dopant for metalcontaining films, such as but not limited to, metal oxide films or metalnitride films. In these embodiments, the metal containing film isdeposited using an ALD or CVD process such as those processes describedherein using metal alkoxide, metal amide, or volatile organometallicprecursors. Examples of suitable metal alkoxide precursors that may beused with the method disclosed herein include, but are not limited to,group 3 to 6 metal alkoxide, group 3 to 6 metal complexes having bothalkoxy and alkyl substituted cyclopentadienyl ligands, group 3 to 6metal complexes having both alkoxy and alkyl substituted pyrrolylligands, group 3 to 6 metal complexes having both alkoxy and diketonateligands; group 3 to 6 metal complexes having both alkoxy and ketoesterligands; Examples of suitable metal amide precursors that may be usedwith the method disclosed herein include, but are not limited to,tetrakis(dimethylamino)zirconium (TDMAZ),tetrakis(diethylamino)zirconium (TDEAZ),tetrakis(ethylmethylamino)zirconium (TEMAZ),tetrakis(dimethylamino)hafnium (TDMAH), tetrakis(diethylamino)hafnium(TDEAH), and tetrakis(ethylmethylamino)hafnium (TEMAH),tetrakis(dimethylamino)titanium (TDMAT), tetrakis(diethylamino)titanium(TDEAT), tetrakis(ethylmethylamino)titanium (TEMAT), tert-butyliminotri(diethylamino)tantalum (TBTDET), tert-butyliminotri(dimethylamino)tantalum (TBTDMT), tert-butyliminotri(ethylmethylamino)tantalum (TBTEMT), ethyliminotri(diethylamino)tantalum (EITDET), ethyliminotri(dimethylamino)tantalum (EITDMT), ethyliminotri(ethylmethylamino)tantalum (EITEMT), tert-amyliminotri(dimethylamino)tantalum (TAIMAT), tert-amyliminotri(diethylamino)tantalum, pentakis(dimethylamino)tantalum,tert-amylimino tri(ethylmethylamino)tantalum,bis(tert-butylimino)bis(dimethylamino)tungsten (BTBMW),bis(tert-butylimino)bis(diethylamino)tungsten,bis(tert-butylimino)bis(ethylmethylamino)tungsten, and combinationsthereof. Examples of suitable organometallic precursors that may be usedwith the method disclosed herein include, but are not limited to, group3 metal cyclopentadienyls or alkyl cyclopentadienyls. Exemplary Group 3to 6 metal herein include, but not limited to, Y, La, Ce, Pr, Nd, Sm,Eu, Gd, Tb, Dy, Er, Yb, Lu, Ti, Hf, Zr, V, Nb, Ta, Cr, Mo, and W.

In certain embodiments, the resultant silicon-containing films orcoatings can be exposed to a post-deposition treatment such as, but notlimited to, a plasma treatment, chemical treatment, ultraviolet lightexposure, electron beam exposure, and/or other treatments to affect oneor more properties of the film.

In certain embodiments, the silicon-containing films described hereinhave a dielectric constant of 6 or less. In these or other embodiments,the films can a dielectric constant of about 5 or below, or about 4 orbelow, or about 3.5 or below. However, it is envisioned that filmshaving other dielectric constants (e.g., higher or lower) can be formeddepending upon the desired end-use of the film. An example of thesilicon containing or silicon-containing film that is formed using theorganoaminodisilane precursors and processes described herein has theformulation Si_(x)O_(y)C_(z)N_(v)H_(w) wherein Si ranges from about 10%to about 40%; 0 ranges from about 0% to about 65%; C ranges from about0% to about 75% or from about 0% to about 50%; N ranges from about 0% toabout 75% or from about 0% to 50%; and H ranges from about 0% to about50% atomic percent weight % wherein x+y+z+v+w=100 atomic weight percent,as determined for example, by XPS or other means.

As mentioned previously, the method described herein may be used todeposit a silicon-containing film on at least a portion of a substrate.Examples of suitable substrates include but are not limited to, silicon,SiO₂, Si₃N₄, OSG, FSG, silicon carbide, hydrogenated silicon carbide,silicon nitride, hydrogenated silicon nitride, silicon carbonitride,hydrogenated silicon carbonitride, boronitride, antireflective coatings,photoresists, organic polymers, porous organic and inorganic materials,a flexible substrate, metals such as copper and aluminum, and diffusionbarrier layers such as but not limited to TiN, Ti(C)N, TaN, Ta(C)N, Ta,W, or WN. The films are compatible with a variety of subsequentprocessing steps such as, for example, chemical mechanical planarization(CMP) and anisotropic etching processes.

The deposited films have applications, which include, but are notlimited to, computer chips, optical devices, magnetic informationstorages, coatings on a supporting material or substrate,microelectromechanical systems (MEMS), nanoelectromechanical systems,thin film transistor (TFT), light emitting diodes (LED), organic lightemitting diodes (OLED), IGZO, and liquid crystal displays (LCD).

The following examples illustrate the method for preparingorganoaminodisilane precursors as well as deposited silicon-containingfilms described herein and are not intended to limit it in any way.

EXAMPLES Example 1 Synthesis of 1,2-Bis(di-sec-butylamino)disilane

In a 3-necked round bottom flask equipped with a mechanic stirrer, acondenser, and an addition funnel, a solution of 1 equivalent1,2-dichlorodisilane in hexane was cooled to −10 C with a cold bath.With stirring, 4 equivalent of di-sec-butylamine was added dropwisethrough the addition funnel. After the addition was completed, thereaction mixture was allowed to warm up to room temperature. Thereaction mixture was stirred at room temperature for 2 hours, followedby filtration. A distillation removed solvent hexane from the filtrate.The product 1,2-Bis(di-sec-butylamino)disilane was obtained by vacuumdistillation. Gas chromatography (GC) showed that it was >99% pure1,2-bis(di-sec-butylamino)disilane

Example 2 Synthesis of 1,2-Bis(cis-2,6-dimethylpiperidino)disilane

In a 3-necked round bottom flask equipped with a mechanic stirrer, acondenser, and an addition funnel, a solution of 1 equivalent1,2-dichlorodisilane in hexane was cooled to −10° C. with a cold bath.With stirring, 4 equivalents of cis-2,6-dimethylpiperidine was addeddropwise through the addition funnel. After the addition was completed,the reaction mixture was allowed to warm up to room temperature. Thereaction mixture was stirred at room temperature for 2 hours, followedby filtration. A distillation removed solvent hexane from the filtrate.The product 1,2-Bis(di-sec-butylamino)disilane was obtained by vacuumdistillation. Gas chromatography (GC) showed that it was >99% pure1,2-bis(cis-2,6-dimethylpiperidino)disilane.

1. An organoaminodisilane precursor comprising a Si—N bond, a Si—Sibond, and a Si—H₂ group represented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; provided that R¹, R², R³, and R⁴ are notiso-propyl groups.
 2. The organoaminodisilane precursor of claim 1wherein any one or all of R¹ and R², R³ and R⁴, R¹ and R³, or R² and R⁴are selected from a linear or branched C₃ to C₆ alkyl group and arelinked to form a cyclic ring.
 3. The organoaminodisilane precursor ofclaim 1 wherein R¹, R², R³, and R⁴ are the same but not methyl, ethyl,or iso-propyl.
 4. The organoaminodisilane precursor of claim 1 whereinR¹, R², R³, and R⁴ are different.
 5. The organoaminodisilane precursorof claim 1 comprising at least one selected from the group consisting of1,2-bis(di-sec-butylamino)disilane, phenylethylaminodisilane,1-(di-iso-propylamino)-2-(2,6-dimethylpiperidino)disilane,1,2-bis(2,6-dimethylpiperidino)disilane, and1,2-bis(pyrrolidinodisilane)disilane.
 6. The organoaminodisilaneprecursor of claim 5 comprising 1,2-bis(di-sec-butylamino)disilane. 7.The organoaminodisilane precursor of claim 5 comprisingphenylethylaminodisilane.
 8. The organoaminodisilane precursor of claim5 comprising 1,2-bis(2,6-dimethylpiperidino)disilane.
 9. A compositioncomprising: (a) at least one organoaminodisilane precursor comprising aSi—N bond, a Si—Si bond, and a Si—H₂ group represented by the followingFormula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; and (b) a solvent wherein the solvent hasa boiling point and the difference between the boiling point of thesolvent and a boiling point of the organoaminodisilane is 40° C. orless.
 10. The organoaminodisilane precursor of claim 9 comprising atleast one selected from the group consisting of1,2-bis(di-iso-propylamino)disilane, 1,2-bis(di-sec-butylamino)disilane,1,2-bis(2,6-dimethylpiperidino)disilane, and1,2-bis(pyrrolidinodisilane)disilane.
 11. The solvent in claim 9comprising at least one selected from the group consisting of ether,tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, and tertiaryaminoether.
 12. A method for forming a silicon-containing film on atleast one surface of a substrate by a deposition process chosen from achemical vapor deposition process and an atomic layer depositionprocess, the method comprising: providing the at least one surface ofthe substrate in a reaction chamber; introducing at least oneorganoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, anda Si—H₂ group represented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; and introducing a nitrogen-containingsource into the reactor wherein the at least one organoaminodisilaneprecursor and the nitrogen-containing source react to provide thesilicon-containing film on the at least one surface.
 13. The method ofclaim 12 wherein the at least one organoaminodisilane precursor isselected from the group consisting of1,2-bis(di-iso-propylamino)disilane, 1,2-bis(di-sec-butylamino)disilane,1,2-bis(pyrrolidinodisilane)disilane, and1,2-bis(2,6-dimethylpiperidino)disilane.
 14. The method of claim 12wherein the at least one organoaminodisilane precursor comprises1,2-bis(di-iso-propylamino)disilane.
 15. The method of claim 13 whereinthe at least one organoaminodisilane precursor comprises1,2-bis(di-sec-butylamino)disilane.
 16. The method of claim 13 whereinthe at least one organoaminodisilane precursor comprises1,2-bis(2,6-dimethylpiperidino)disilane.
 17. The method of claim 12wherein the nitrogen-containing source is selected from the groupconsisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine,nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma,nitrogen/hydrogen plasma, and mixtures thereof.
 18. The method of claim12 wherein the silicon-containing film is selected from the groupconsisting of silicon nitride and silicon carbonitride.
 19. A method offorming a silicon-containing film via an atomic layer deposition (ALD)deposition process, the method comprising the steps of: a. providing asubstrate in an ALD reactor; b. providing in the ALD reactor at leastone organoaminodisilane precursor comprising a Si—N bond, a Si—Si bond,and a Si—H₂ group represented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; c. purging the ALD reactor with an inertgas; d. providing a nitrogen-containing source in the ALD reactor; ande. purging the ALD reactor with an inert gas; wherein steps b through eare repeated until a desired thickness of the silicon-containing film isobtained.
 20. The method of claim 19 wherein the at least oneorganoaminodisilane precursor is selected from the group consisting of1,2-bis(di-iso-propylamino)disilane, 1,2-bis(di-sec-butylamino)disilane,1,2-bis(pyrrolidinodisilane)disilane, and1,2-bis(2,6-dimethylpiperidino)disilane.
 21. The method of claim 20wherein the at least one organoaminodisilane precursor comprises1,2-bis(di-iso-propylamino)disilane.
 22. The method of claim 20 whereinthe at least one organoaminodisilane precursor comprises1,2-bis(di-sec-butylamino)disilane.
 23. The method of claim 20 whereinthe at least one organoaminodisilane precursor comprises1,2-bis(2,6-dimethylpiperidino)disilane.
 24. The method of claim 19wherein the nitrogen-containing source is selected from the groupconsisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine,nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma,nitrogen/hydrogen plasma, and mixtures thereof.
 25. The method of claim19 wherein the silicon-containing film is selected from the groupconsisting of silicon nitride and silicon carbonitride.
 26. A method offorming a silicon-containing film onto at least a surface of a substrateusing a plasma enhanced atomic layer deposition (PEALD) process, themethod comprising: a. providing a substrate in an ALD reactor; b.providing in the ALD reactor an at least one organoaminodisilaneprecursor comprising a Si—N bond, a Si—Si bond, and a Si—H₂ grouprepresented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; c. purging the ALD reactor with an inertgas; d. providing a plasma nitrogen-containing source in the ALDreactor; and e. purging the ALD reactor with an inert gas; wherein stepsb through e are repeated until a desired thickness of thesilicon-containing film is obtained.
 27. The method of claim 26 whereinthe at least one organoaminodisilane precursor is selected from thegroup consisting of 1,2-bis(di-iso-propylamino)disilane,1,2-bis(di-sec-butylamino)disilane,1,2-bis(pyrrolidinodisilane)disilane, and1,2-bis(2,6-dimethylpiperidino)disilane.
 28. The method of claim 27wherein the at least one organoaminodisilane precursor comprises1,2-bis(di-iso-propylamino)disilane.
 29. The method of claim 27 whereinthe at least one organoaminodisilane precursor comprises1,2-bis(di-sec-butylamino)disilane.
 30. The method of claim 27 whereinthe at least one organoaminodisilane precursor comprises1,2-bis(2,6-dimethylpiperidino)disilane.
 31. The method of claim 26wherein the nitrogen-containing source is selected from the groupconsisting of ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine,nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma,nitrogen/hydrogen plasma, and mixtures thereof.
 32. The method of claim26 wherein the silicon-containing film is selected from the groupconsisting of silicon nitride and silicon carbonitride.
 33. A method forforming a silicon oxide film on a substrate comprising: reacting anoxygen-containing source with a precursor comprising at least oneorganoaminodisilane precursor comprising Si—N bond, Si—Si bond, andSi—H₂ groups represented by the following formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring in a vapor deposition process to form thesilicon oxide film on the substrate.
 34. The method of claim 33 whereinthe vapor deposition is at least one selected from the group consistingof at least one selected from chemical vapor deposition, low pressurevapor deposition, plasma enhanced chemical vapor deposition, cyclicchemical vapor deposition, plasma enhanced cyclic chemical vapordeposition, atomic layer deposition, and plasma enhanced atomic layerdeposition.
 35. The method of claim 33 wherein the at least oneorganoaminodisilane precursor is selected from the group consisting of1,2-bis(di-iso-propylamino)disilane, 1,2-bis(di-sec-butylamino)disilane,1,2-bis(pyrrolidinodisilane)disilane, and1,2-bis(2,6-dimethylpiperidino)disilane.
 36. The method of claim 33wherein the reacting step is conducted at a temperature of 200° C. orless.
 37. The method of claim 33 wherein the reacting step is conductedat a temperature of 100° C. or less.
 38. The method of claim 33 whereinthe reacting step is conducted at 50° C. or less.
 39. A method forforming a silicon oxide film on a substrate comprising: forming viavapor deposition of the silicon oxide film on the substrate from acomposition comprising at least one organoaminodisilane precursorcomprising Si—N bond, Si—Si bond, and Si—H₂ groups represented by thefollowing formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring, wherein the vapor deposition is at leastone selected from chemical vapor deposition, low pressure vapordeposition, plasma enhanced chemical vapor deposition, cyclic chemicalvapor deposition, plasma enhanced cyclic chemical vapor deposition,atomic layer deposition, and plasma enhanced atomic layer deposition.40. The method of claim 39 wherein the at least one organoaminodisilaneprecursor is selected from the group consisting of1,2-bis(di-iso-propylamino)disilane, 1,2-bis(di-sec-butylamino)disilane,1,2-bis(pyrrolidinodisilane)disilane, and1,2-bis(2,6-dimethylpiperidino)disilane.
 41. The method of claim 39wherein the reacting step is conducted at a temperature of 200° C. orless.
 42. The method of claim 39 wherein the reacting step is conductedat a temperature of 100° C. or less.
 43. The method of claim 39 whereinthe reacting step is conducted at 50° C. or less.
 44. A method forforming a silicon oxide film on a substrate comprising: introducing atleast one organoaminodisilane precursor comprising a Si—N bond, a Si—Sibond, and a Si—H₂ group represented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring into a reactor; and introducing at leastone oxygen-containing source into the reactor wherein the at least oneoxygen-containing source reacts with the organoaminodisilane to providethe silicon oxide film on the substrate.
 45. A method for forming asilicon oxide film on a substrate wherein the film comprises athickness, the method comprising: a. introducing at least oneorganoaminodisilane precursor comprising a Si—N bond, a Si—Si bond, anda Si—H₂ group represented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; b. chemisorbing the at least oneorganoaminodisilane precursor onto the substrate; c. purging away theunreacted at least one organoaminodisilane precursor using a purge gas;d. providing an oxygen-source to the organoaminodisilane precursor ontothe heated substrate to react with the sorbed at least oneorganoaminodisilane precursor; and e. optionally purging away anyunreacted oxygen-containing source.
 46. The method of claim 45 whereinsteps a. through d. and optional step e. are repeated until thethickness of film is established.
 47. The method of claim 45 wherein theat least one organoaminodisilane precursor is selected from the groupconsisting of 1,2-bis(di-iso-propylamino)disilane,1,2-bis(di-sec-butylamino)disilane,1,2-bis(pyrrolidinodisilane)disilane, and1,2-bis(2,6-dimethylpiperidino)disilane.
 48. The method of claim 45wherein the reacting step is conducted at a temperature of 200° C. orless.
 49. The method of claim 48 wherein the reacting step is conductedat a temperature of 100° C. or less.
 50. The method of claim 48 whereinthe reacting step is conducted at 50° C. or less.
 51. The method ofclaim 45 is an atomic layer deposition process.
 52. The method of claim45 is a plasma enhanced cyclic chemical vapor deposition process.
 53. Amethod for forming a silicon containing film using a deposition methodselected from an ALD deposition process or a cyclic CVD depositionprocess that comprises the steps of: a. placing a substrate into areactor which is heated to one or more temperatures ranging from about25° C. to about 700° C.; b. introducing at least one organoaminodisilaneprecursor comprising a Si—N bond, a Si—Si bond, and a Si—H₂ grouprepresented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; c. purging away the unreacted at least oneorganoaminodisilane precursor using a purge gas; and d. optionallypurging away any unreacted reducing agent wherein steps b to c arerepeated until a desired thickness of the silicon-containing film isobtained.
 54. The method of claim 53 wherein the reducing agent is atleast one selected from the group consisting of hydrogen, hydrogenplasma, or hydrogen chloride.
 55. A method of depositing a silicon filmusing a deposition process selected from atomic layer deposition, cyclicchemical vapor deposition process, and chemical vapor deposition, themethod comprising the steps of: a. providing a substrate in a reactor;b. introducing into the reactor an at least one organoaminodisilaneprecursor comprising a Si—N bond, a Si—Si bond, and a Si—H₂ grouprepresented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; and c. optionally purging the reactor witha purge gas or pumping the reactor wherein steps b through c arerepeated until a desired thickness of the silicon film is obtained. 56.A vessel wherein the vessel is used to deliver a precursor for adeposition of a silicon-containing film, the vessel comprising: an atleast one organoaminodisilane precursor comprising a Si—N bond, a Si—Sibond, and a Si—H₂ group represented by the following Formula I below:

wherein R¹ and R³ are each independently selected from a linear orbranched C₃ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀ alkenylgroup, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; R² and R⁴ are each independently selected from a hydrogen, alinear or branched C₁ to C₁₀ alkyl group, a linear or branched C₃ to C₁₀alkenyl group, a linear or branched C₃ to C₁₀ alkynyl group, a C₁ to C₆dialkylamino group, an electron withdrawing group, and a C₆ to C₁₀ arylgroup; and wherein any one, all, or none of R¹ and R², R³ and R⁴, R¹ andR³, or R² and R⁴ are linked together to form a ring selected from asubstituted or unsubstituted aromatic ring or a substituted orunsubstituted aliphatic ring; and wherein the purity of the precursor isabout 98% or greater.
 57. The vessel of claim 56 wherein the vessel iscomprised of stainless steel.